Dispersion composition for metal oxide semiconductor film formation, and metal oxide semiconductor film manufacturing method

摘要: PROBLEM TO BE SOLVED: To provide a dispersion composition for metal oxide semiconductor film formation which enables the improvement of long-term stability particle, and is suitable to use e.g. flexible substrate having poor heat resistance, method manufacturing thin transistor.SOLUTION: The includes particles microparticles. have an average particle size 1-100 nm. microparticles include at least one kind metals constituting particles. 40% or smaller.