作者: T. Hidouri , H. Saidi , C. Amri , F. Saidi , A. Bouazizi
DOI: 10.1016/J.SPMI.2016.07.004
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摘要: Abstract In this work, hybrid nano-composite based on poly (3-hexylthiophene) P3HT and silicon nanowires (SiNWs) were prepared by Ag-assisted chemical etching method (MACE) n-type (100) Si substrate. We study the influence of power wavelength excitation photoluminescence (PL) properties. note that charge transfer between SiNWs is more pronounced using an 488 nm than 514 nm. This result correlates with penetration depth found. Luminescence keys as function density proves explication behavior in structure. A red shift PL peak was noted increasing for 514 nm due to confinement effect.