Effect of Te addition on the optical properties of As2S3 thin film
作者： Ramakanta Naik , C. Kumar , R. Ganesan , K.S. Sangunni
DOI: 10.1016/J.MATCHEMPHYS.2011.07.062
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摘要: Abstract Bilayer thin films of Te/As2S3 were prepared from Te and As2S3 by thermal technique under high vacuum. Optical constants calculated analysing the transmission spectrum in spectral range 400–1100 nm. The optical band gap decreases with addition to As2S3. decrease has been explained on basis density states increase disorder system. We have irradiated as-deposited using a diode pumped solid state laser 532 nm wavelength study photo-diffusion into changes characterised Fourier Transform Infrared X-ray Photoelectron Spectroscopy (XPS). is found be decreased light irradiation which proposed due homopolar bond formation. core level peaks XPS spectra give information about different
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