Transistors and method for making ohmic contact to transistors

摘要: A transistor device having non-alloyed ohmic contacts formed by a process that improves the contact morphology and reduces metal spiking into semiconductor layers. During fabrication, regrowth mask is deposited on device. portion of epitaxial layers removed, defining areas for selective highly-doped material. The remaining forms residual layer. After regrowth, are structures without use high-temperature annealing process. layer does not need to be but rather remains throughout fabrication can function as passivation and/or spacer