作者: Henry Wang , Chia-Chun Yeh , Xue-Hung Tsai , Ted-Hong Shinn
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摘要: Disclosed herein is an electrostatic discharge protection structure which includes a signal line, thin-film transistor and shunt wire. The gate electrode, metal-oxide semiconductor layer, source electrode drain electrode. first layer disposed above the has channel region characterized in having width/length ratio of less than 1. equipotentially connected to wire electrically When line receives voltage surge greater predetermined magnitude, shunted through