Linear non-hysteretic gating of a very high density 2DEG in an undoped metal-semiconductor-metal sandwich structure

摘要: Modulation doped GaAs-AlGaAs quantum well based structures are usually used to achieve very high mobility 2-dimensional electron (or hole) gases. Usually mobilities ($>10^{7}{\rm{cm}^{2}\rm{V}^{-1}\rm{s}^{-1}}$) achieved at densities. A loss of linear gateability is often associated with the highest mobilites, on account a some residual hopping or parallel conduction in regions. We have developed method using fully undoped wells, where densities $\approx{6\times10^{11}\rm{cm}^{-2}}$ can be while maintaining and non-hysteretic gateability. use these devices understand possible limiting mechanisms