作者: G. Wang
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摘要: Two main parts have been presented in this thesis: device characterization and circuit. In integrated bandgap references temperature sensors, the IC(VBE, characteristics of bipolar transistors are used to generate basic signals with high accuracy. To investigate possibilities fabricate high-precision sensors low-cost CMOS technology, electrical substrate pnp investigated over a wide range. The measurement results show that at moderate current range, good exponential relation between base-emitter voltage collector exists. Moreover, behavior can be well modeled well-known Gummel-Poon model. Even negative correlation extracted parameters Vgo is similar earlier reported for technology. Non-ideal effects, instance low forward common-emitter gain (BF), base resistance, level injections stress effect, etc. also analysed. Methods suggestions given get rid non-ideal effects order improve performances sensors. design high-performance or addition exploiting best transistors, we needed apply advanced circuit techniques. thesis, special techniques application low-speed sensor systems described. For instance, three signal auto-calibration applied eliminate additive multiplexitive uncertainties transfer Chopping technique has reduce low-frequency interferences 1/f noise. By applying dynamic element matching (DEM), errors due component mismatching reduced second order. described systems, indirect A/D converters (modulators) applied, because their simplicity, accuracy resolution. interference noise, chopping was applied. increase input pre-amplifier divider small large respectively. DEM significantly reduced. Accurate realized way. A thermocouple interface presented. On-chip reference included compensation junction temperature. Research on fabricated technology designing performance sensor. switch-capacitor which allows rail-to-rail common-mode voltage. Furthermore, such as three-signal auto-calibration, mentioned above too. designed implemented 0.7-im tested test thesis. SC instrumentation amplifier thesis