摘要: High-frequency devices based on graphene is a promising field of research. In this paper we investigate two important parameters which theory are essential in order to have nonlinear responses graphene. The first parameter scattering time should be as high 1ps. Also the electrical incident radiation higher certain threshold response. This generally quite and increases with frequency carrier density, so it that flake tolerate field. condition cannot reached by SiO2/Si substrate according our investigation.