Analysis of the lattice thermal resistivity due to the presence of electrons at low temperatures: Application to phosphorus-doped Ge

摘要: The temperature-dependence of the extra lattice thermal resistivity a doped sample due to presence electrons has been studied at low temperatures for first time by analysing five samples phosphorus-doped Ge having different carrier concentrations in range 1.2×1023–1.1×1024 m−3 temperature 1–5 K. variation with parameters η* (the reduced Fermi energy),m* density states effective mass),ED deformation potential constant) andn concentration) which are responsible electron-phonon scattering relaxation rate also analysed present study. A distinction made between non-peripheral and peripheral phonons analysis. An analytical expression is reported calculation an approximate value temperatures.