Investigation of Inverse Piezoelectric Effect and Trap Effect in AlGaN/GaN HEMTs Under Reverse-Bias Step Stress at Cryogenic Temperature
作者： Qing Zhu , Xiaohua Ma , Bin Hou , Mei Wu , Jiejie Zhu
DOI: 10.1109/ACCESS.2020.2975118
关键词:
摘要: … the low temperature reliability of GaN based HEMTs is lack of investigation [13]. Many reliability issues of GaN HEMTs … Two models under the high electric field in the reverse-bias stress …
sci-hub.se 参考文章(26)
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