Modeling of radiation damage recovery in particle detectors based on GaN
作者： E. Gaubas , T. Ceponis , J. Pavlov
DOI: 10.1016/J.NIMB.2015.07.013
关键词:
摘要: Abstract The pulsed characteristics of the capacitor-type and PIN diode type detectors based on GaN have been simulated using dynamic drift–diffusion models. current simulations implemented by employing commercial software package Synopsys TCAD Sentaurus. bipolar drift regime has analyzed. possible internal gain in charge collection through carrier multiplication processes determined impact ionization considered order to compensate lifetime reduction due radiation defects introduced into material detector.
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