Over-current turn-off failure in high voltage IGBT modules under clamped inductive load
作者： M. Mermet-Guyennet , S. Hidalgo , J. F. Serviere , J. Rebollo , X. Jorda
DOI:
关键词:
摘要: Considering typical conditions of railway traction applications, this paper presents an experimental and simulative analysis over-current turn-off failure in IGBT devices packaged parallel within multichip modules. Extensive is carried out by means a dedicated test-circuit. Thus, for greater insight, electro-thermal simulations at device level have been out. The results show that mismatches the properties during transient operation can lead to uneven power dissipation, significantly enhancing risk failure.
参考文章(19)
V. F. Sinkevitch, Vladislav A. Vashchenko, Physical Limitations of Semiconductor Devices ,(2008)
Ned Mohan, William P. Robbins, Tore M. Undeland, Power Electronics: Converters, Applications and Design ,(1989)
K. Heumann, M. Quenum, Second breakdown and latch-up behavior of IGBTs european conference on power electronics and applications. pp. 301- 305 ,(2002)
P. Rose, D. Silber, A. Porst, F. Pfirsch, Investigations on the stability of dynamic avalanche in IGBTs international symposium on power semiconductor devices and ic's. pp. 165- 168 ,(2002) , 10.1109/ISPSD.2002.1016197
F. Weitzsch, A discussion of some known physical models for second breakdown IEEE Transactions on Electron Devices. ,vol. 13, pp. 731- 734 ,(1966) , 10.1109/T-ED.1966.15833
X Perpiñà, Jean-François Serviere, Xavier Jordà, A Fauquet, Salvador Hidalgo, Jesús Urresti-Ibañez, José Rebollo, Michel Mermet-Guyennet, IGBT module failure analysis in railway applications. Microelectronics Reliability. ,vol. 48, pp. 1427- 1431 ,(2008) , 10.1016/J.MICROREL.2008.06.032
B.S. Khurana, T. Sugano, H. Yanai, Thermal breakdown in silicon p-n junction devices IEEE Transactions on Electron Devices. ,vol. 13, pp. 763- 770 ,(1966) , 10.1109/T-ED.1966.15840
X. Perpiñà, A. Castellazzi, M. Piton, M. Mermet-Guyennet, J. Millán, Failure-relevant abnormal events in power inverters considering measured IGBT module temperature inhomogeneities Microelectronics Reliability. ,vol. 47, pp. 1784- 1789 ,(2007) , 10.1016/J.MICROREL.2007.07.071
Mauro Ciappa, Selected failure mechanisms of modern power modules Microelectronics Reliability. ,vol. 42, pp. 653- 667 ,(2002) , 10.1016/S0026-2714(02)00042-2
J Arkenau, R Sittig, J Oetjen, R Jungblut, U Kuhlmann, Current filamentation in bipolar power devices during dynamic avalanche breakdown Solid-state Electronics. ,vol. 44, pp. 117- 123 ,(2000) , 10.1016/S0038-1101(99)00209-9