High-frequency detection of cell activity of Physarum polycephalum by a planar open gate AlGaN/GaN HEMT
作者： Hartmut Witte , Thomas Lippelt , Christian Warnke , Armin Dadgar , Marcus J B Hauser
DOI: 10.1088/0022-3727/47/42/425401
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摘要: The dynamics of cells the slime mould Physarum polycephalum are investigated with a planar AlGaN/GaN high electron mobility transistor (HEMT) without any gate metallization. source–drain contacts used in two-electrode arrangement whereas free surface area is occupied by cell. In order to understand measured signals, basic properties interface between cell and HEMT were analysed impedance spectroscopy. At frequencies governed conductance due direct current through HEMT/cell interface. locomotive recorded at 10 kHz combination simultaneous video imaging that monitored degree occupancy A precise correlation was found coverage It observed entire region sensitive activity.Well-resolved cellular oscillations for all parameters. Their periods corresponded typical intracellular shuttle streaming protoplasma Physarum. This demonstrates high-frequency measurements structures well suited analysis both static parts single as their dynamic behaviour, such expansion motility.
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