Photo-emission and transport studies of HfxTi1-xSe2 alloys
作者： H I Starnberg , M T Johnson , R H Friend , H P Hughes , F Levy
DOI: 10.1088/0022-3719/20/10/017
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摘要: The valence bands of HfxTi1-xSe2 have been studied by angle-resolved photoelectron spectroscopy for x=0.3 and 0.5. These results indicate the existence small band gaps between conduction in both these alloys. authors interpret existing Hall effect data, which show evidence high-mobility holes Hf0.3TiO.7Se2 sample, terms thermal excitations across gap at high temperatures. They model temperature pressure dependence quantitatively, determine Hf0.3Ti0.7Se2 to be 104 meV atmospheric with a derivative -6 kbar-1. new is relevant also TiSe2, but conclusion that this material semi-metallic its high-temperature phase unaffected.
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