Femtosecond Probing of Photoinduced Refractive Index Changes in Semiconductors

摘要: For decades, Information technology has been dominated by electronics. Increasingly, however, the physical limitations of electronics are being or have reached and scientists exploring new technologies for transmitting, storing processing information. Many believe that light photons will form “current” information in next century photonics could possibly supplant several devices. Certainly is now making significant inroads areas such as transmission storage. However, same can’t be said routing switching, since functions still carried out using all electronic hybrid, opto-electronic technologies. Increasing demands integration call all-optical switching devices it become “holy grail” emerging optical communication to find suitable materials which display a large enough fast response considered The underlying mechanism researched many these quests photo-induced refractive index changes [Shen, 1984; Gibbs,1985]. It envisioned gate pulse can used alter local device thus modify direction propagation, phase, an passing through what commonly referred light-by-light switching. different types continue investigated applications including semiconductors, glasses, semiconductor-doped polymers [Miller, 1981; Stegeman, 1985; Haug, 1988; Gibbs, 1990]. Also, geometries based on Fabry-Perot interferometers, etalons, waveguides, diffraction, scattering [Stegeman, 1985].