Growth of residual stress-free ZnO films on SiO2/Si substrate at room temperature for MEMS devices

摘要: ZnO thick Stress relaxed films were deposited by reactive magnetron sputtering on 2”-wafer of SiO2/Si at room temperature. The residual stress was measured measuring the curvature wafer using laser scanning method and found in range 0.18 x 109 to 11.28 dyne/cm2 with compressive nature. Sputter pressure changes deposition rates, which strongly affects surface morphologies films. crystalline wurtzite structure confirmed X-ray diffraction a shift (0002) peak towards lower 2θ angle observed increasing band gap shows red from ∼3.275 eV ∼3.23 as is increased, unlike for III-nitride materials. A relationship between derived proposed. stress-free growth piezoelectric very important functional devices applications.