Microstructure–property relationship in textured ZnO-based varistors
作者： İ. Özgür Özer , Ender Suvaci , Slavko Bernik
DOI: 10.1016/J.ACTAMAT.2010.04.003
关键词:
摘要: The relationship between microstructure texturing and electrical characteristics of a ZnO-based varistor system was investigated in comparison with having the same chemical composition but conventional microstructure. Highly textured varistors were produced via templated grain growth (TGG) technique. Stereological analysis, electron back-scattered diffractometry (EBSD) X-ray (XRD) conducted to analyze texture development orientation distribution. degree orientation, r, calculated from (0 0 1) EBSD pole figure, 0.34; fraction, f (Lotgering factor), XRD data, 0.98 for samples TGG. threshold voltages found be anisotropic, consistent observed morphological texture. non-linear coefficients, α, did not exhibit significant difference as function direction, even highly samples. However, different types boundary depending on direction identified 0.42, 0.69 1.14 eV Schottky barrier heights.
elsevier.com
sci-hub.se 参考文章(40)
C. Leach, Grain boundary structures in zinc oxide varistors Acta Materialia. ,vol. 53, pp. 237- 245 ,(2005) , 10.1016/J.ACTAMAT.2004.07.006
Fumiyasu Oba, Yukio Sato, Takahisa Yamamoto, Yuichi Ikuhara, Taketo Sakuma, Current–Voltage Characteristics of Cobalt‐Doped Inversion Boundaries in Zinc Oxide Bicrystals Journal of the American Ceramic Society. ,vol. 86, pp. 1616- 1618 ,(2003) , 10.1111/J.1151-2916.2003.TB03526.X
Mattias Elfwing, Ragnar Österlund, Eva Olsson, Differences in Wetting Characteristics of Bi2O3 Polymorphs in ZnO Varistor Materials Journal of the American Ceramic Society. ,vol. 83, pp. 2311- 2314 ,(2004) , 10.1111/J.1151-2916.2000.TB01552.X
Hsin Wang, Wangpei Li, James F. Cordaro, Single Junctions in ZnO Varistors Studied by Current-Voltage Characteristics and Deep Level Transient Spectroscopy Japanese Journal of Applied Physics. ,vol. 34, pp. 1765- 1771 ,(1995) , 10.1143/JJAP.34.1765
M. Tao, Bui Ai, O. Dorlanne, A. Loubiere, Different ‘‘single grain junctions’’ within a ZnO varistor Journal of Applied Physics. ,vol. 61, pp. 1562- 1567 ,(1987) , 10.1063/1.338091
Gert Hohenberger, Gerhard Tomandl, Rolf Ebert, Thomas Taube, Inhomogeneous Conductivity in Varistor Ceramics: Methods of Investigation Journal of the American Ceramic Society. ,vol. 74, pp. 2067- 2072 ,(1991) , 10.1111/J.1151-2916.1991.TB08260.X
John Bruley, Ulrich Bremer, Viktor Krasevec, Chemistry of Basal Plane Defects in Zinc Oxide–Antimony Oxide (0.1 mol%) Ceramics Journal of the American Ceramic Society. ,vol. 75, pp. 3127- 3128 ,(1992) , 10.1111/J.1151-2916.1992.TB04397.X
Aleksander Rečnik, Nina Daneu, Slavko Bernik, Nucleation and growth of basal-plane inversion boundaries in ZnO Journal of The European Ceramic Society. ,vol. 27, pp. 1999- 2008 ,(2007) , 10.1016/J.JEURCERAMSOC.2006.06.006
G. E. Pike, C. H. Seager, The dc voltage dependence of semiconductor grain‐boundary resistance Journal of Applied Physics. ,vol. 50, pp. 3414- 3422 ,(1979) , 10.1063/1.326334
Matthew M. Seabaugh, Ingrid H. Kerscht, Gary L. Messing, Texture Development by Templated Grain Growth in Liquid-Phase-Sintered α-Alumina Journal of the American Ceramic Society. ,vol. 80, pp. 1181- 1188 ,(2005) , 10.1111/J.1151-2916.1997.TB02961.X