P3HT:PCBM blend based photo organic field effect transistor
作者： Muhammad Yasin , T. Tauqeer , Khasan S. Karimov , Sait E. San , Arif Kösemen
DOI: 10.1016/J.MEE.2014.08.010
关键词:
摘要: Abstract In this work, we have fabricated photo organic field effect transistor using the blend of poly(3-hexylthiophene) (P3HT) and [6,6]-phenyl C61-butyric acid methylester (PCBM) as active layer. Transistor was in MESFET type configuration with top gate bottom drain source contacts on glass substrate. Drain were made Silver (Ag) whereas contact by depositing Aluminum (Al) Active layer showed Ohmic drain/source electrodes Schottky electrode which discussed help energy band diagram. I – V characteristics device investigated under dark UV–Vis illumination, these found similar to p-type mode a typical ambipolar transistor. Further, has shown low voltage operation weak saturation trend illumination. Field mobility responsivity values higher compared reported photo-MESFETs. Realization such devices will provide potential for development cost large area flexible sensor arrays other power electronic future.
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