Semiconductor memory device capable of stable sensing operation
作者： Takashi Kono
DOI:
关键词:
摘要: The amount of charge supplied to a high level sense power supply line by control circuit is monitored. Charge an equal drawn out from low according the monitoring result. In memory boosted ground scheme, voltage can be maintained at predetermined stably.
lens.org 参考文章(7)
T. Kono, T. Hamamoto, K. Mitsui, Y. Konishi, A Precharged-Capacitor-Assisted Sensing (PCAS) scheme with novel level controller for low power DRAMs symposium on vlsi circuits. pp. 123- 124 ,(1999) , 10.1109/VLSIC.1999.797258
M. Asakura, T. Ooishi, M. Tsukude, S. Tomishima, T. Eimori, H. Hidaka, Y. Ohno, K. Arimoto, K. Fujishima, T. Nishimura, T. Yoshihara, An experimental 256-Mb DRAM with boosted sense-ground scheme IEEE Journal of Solid-state Circuits. ,vol. 29, pp. 1303- 1309 ,(1994) , 10.1109/4.328628
Louis Hsu, Li-Kong Wang, Boosted sensing ground circuit ,(1998)
Kazuhiko Kajigaya, Hiroki Fujisawa, Tsuyuki Suzuki, Yasunobu Aoki, Osamu Nagashima, Shinichi Miyatake, Tsutomu Takahashi, Masatoshi Hasegawa, Seiji Narui, Dynamic RAM, semiconductor storage device, and semiconductor integrated circuit device ,(1996)
Hong-il Yoon, Dynamic random access memory device having a divided precharge control scheme ,(1999)
Shimizu Masahiko, Oonishi Norihisa, SEMICONDUCTOR MEMORY DEVICE ,(1997)
Kono Shigeki, SEMICONDUCTOR MEMORY DEVICE ,(2000)