Tamper-resistant MRAM utilizing chemical alteration
作者： Anuj Kohli , James L. Tucker , Romney R. Katti
DOI:
关键词:
摘要: A magnetoresistive random access memory (MRAM) die may include an MRAM cell, a reservoir defined by the die, and chemical disposed in reservoir. At least one boundary of be configured to damaged response attempted tampering with such that at some is released from when damaged. In examples, contact alter or damage portion cell
lens.org 参考文章(35)
Theodoor Adriaan Kleijne, Security device for the secure storage of sensitive data ,(1985)
Keith Edwin Daum, Structures for preventing reverse engineering of integrated circuits ,(1994)
Hai Li, Daniel S. Reed, Yong Lu, Andrew John Carter, Non-Volatile Memory Array with Resistive Sense Element Block Erase and Uni-Directional Write ,(2010)
Johannes Hankofer, Stephan Schaecher, Manfred Mengel, Protection for circuit boards ,(2007)
Hosein Gazeri, Nader Salessi, Richard Mataya, Chak-Fai Cheng, Hooshmand Torabi, System and method for purging a flash storage device ,(2006)
Eugene Feng, Gary Phillips, Microcontroller system having security circuitry to selectively lock portions of a program memory address space ,(1998)
Thomas C. Anthony, Heon Lee, Manish Sharma, Heating MRAM cells to ease state switching ,(2003)
Mao Ohara, Storage controller and data erasing method for storage device ,(2011)
Shuxian Shi, Hongtao Sun, Security protection device and method ,(2010)
Hidenori Morimoto, Semiconductor memory device and erase method for memory array ,(2003)