The Spectroscopy of Quantum Dot Arrays

摘要: For three decades individual transistors in integrated semiconductor circuits have been getting smaller and smaller. Soon they will be approaching the 100‐nanometer regime, where classical description of diffusive electron motion breaks down quantum concepts become important, bringing about fundamental changes electronic optical properties. Already widely used silicon MOSFET transistors, interface between oxide layer serves as a potential well less than 10 nm wide. While electrons remain free to wander plane interface, their perpendicular direction is quantized by this very narrow well. Such two‐dimensional systems, best realized high‐mobility modulation‐doped heterostructures, found over years exhibit new quite unexpected phenomena, like integral fractional Hall effects.