Iron and its complexes in silicon

摘要: This article is the first in a series of two reviews on properties iron silicon. It offers comprehensive summary current state understanding fundamental physical and its complexes The section this review discusses position silicon lattice electrical interstitial iron. Updated expressions for solubility diffusivity are presented, possible explanations conflicting experimental data obtained by different groups discussed. second considers structural with shallow acceptors (boron, aluminum, indium, gallium, thallium), donors (phosphorus arsenic) other impurities (gold, silver, platinum, palladium, zinc, sulfur, oxygen, carbon, hydrogen). Special attention paid to kinetics pairing acceptors, dissociation these pairs, metastability iron–acceptor pairs. parameters iron-related defects summarized tables that include more than 30 as detected electron paramagnetic resonance (EPR) almost 20 energy levels band gap associated presented illustrate enormous complexing activity iron, which attributed partial or complete (depending temperature conductivity type) ionization well high shown studies require exceptional cleanliness facilities highly reproducible diffusion ramping (quenching) procedures. Properties not yet completely understood need further research outlined.