SEEBECK EFFECT IN MAGNESIUM SILICIDE

作者: M.W. Heller , G.C. Danielson

DOI: 10.2172/4022481

关键词:

摘要:

参考文章(14)
A.R. Hutson, Electronic properties of ZnO Journal of Physics and Chemistry of Solids. ,vol. 8, pp. 467- 472 ,(1959) , 10.1016/0022-3697(59)90392-0
T. H. Geballe, G. W. Hull, Seebeck Effect in Germanium Physical Review. ,vol. 94, pp. 1134- 1140 ,(1954) , 10.1103/PHYSREV.94.1134
W. Klemm, H. Westlinning, Untersuchungen über die Verbindungen des Magnesiums mit den Elementen der IV b‐Gruppe Zeitschrift für anorganische und allgemeine Chemie. ,vol. 245, pp. 365- 380 ,(1941) , 10.1002/ZAAC.19412450404
H. P. R. Frederikse, W. R. Hosler, D. E. Roberts, Electrical Conduction in Magnesium Stannide at Low Temperatures Physical Review. ,vol. 103, pp. 67- 72 ,(1956) , 10.1103/PHYSREV.103.67
William Shockley, E. M. Field, Electrons and Holes in Semiconductors Physics Today. ,vol. 5, pp. 18- 19 ,(1952) , 10.1063/1.3067420
Conyers Herring, Theory of the Thermoelectric Power of Semiconductors Physical Review. ,vol. 96, pp. 1163- 1187 ,(1954) , 10.1103/PHYSREV.96.1163
H. P. R. Frederikse, Thermoelectric Power of Germanium below Room Temperature Physical Review. ,vol. 92, pp. 248- 252 ,(1953) , 10.1103/PHYSREV.92.248
V. A. Johnson, F. M. Shipley, The Adiabatic Hall Effect in Semiconductors Physical Review. ,vol. 90, pp. 523- 529 ,(1953) , 10.1103/PHYSREV.90.523
L. P. Hunter, Current Carrier Mobility Ratio in Semiconductors Physical Review. ,vol. 91, pp. 579- 581 ,(1953) , 10.1103/PHYSREV.91.579