Field-effect transistor
作者： Charvaka Duvvury
DOI:
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摘要: A field-effect transistor (10, FIG. 2) possesses improved electrostatic discharge characteristics. The (10), formed in a p-type semiconductor substrate, comprises gate (16) that forms channel between two adjacent n-regions (12 and 14). At least one of the (12) has an n-well (22) below centered about contact pad (18). second lower concentration n-type impurities than either n-regions.
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