作者: A. Wawro , S. Suto , R. Czajka , A. Kasuya
DOI: 10.12693/APHYSPOLA.104.303
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摘要: The evolution of iron silicide structure grown by solid state epitaxy on Si(111) vicinal surface was investigated scanning tunnelling microscopy. reactions, which occur the surface, are compared for two various Fe coverages: 0.33 and 2 monolayers. annealing at 250°C does not enable substantial recovery ordering, deteriorated deposition room temperature. onset x reconstruction is observed upon 400°C. A three-dimensional growth tendency crystallites a bare 7 found 700°C. In case monolayer coverage nucleate along edges substrate terraces forming regular array nanometer size dots. Basing atomically resolved spectroscopic effects statistical considerations, nanocrystallites as well Schottky-like character barrier interface between metallic crystallite semiconducting deduced.