Integrated circuit having both vertical and horizontal devices and process for making the same
作者： Jon T. Fitch , Keith E. Witek , Suresh Venkatesan
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摘要: An integrated circuit (10) has a vertical device, such as transistor (71), formed by epitaxial growth from substrate (12) and horizontal (73, 75) grown epitaxially the device. In accordance with one embodiment of invention, all six transistors an SRAM cell can be in single crystal material for improved device characteristics increased density. Utilization various combinations devices permits large degree integration within semiconductor devices.
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