Electron-stimulated oxidation of Al(111) by oxygen at low temperatures: Mechanism of enhanced oxidation kinetics
作者： V. Zhukov , I. Popova , J. T. Yates
DOI: 10.1103/PHYSREVB.65.195409
关键词:
摘要: In this paper, the enhancement of Al( 111 ) oxidation rate by simultaneous oxygen exposures and electron irradiation is investigated at 90 K using X-ray photoelectron spectroscopy (XPS) work-function (WF) measurements. Electron-beam energies ∼0-100 eV current densities up to 80 μA/cm 2 are used. No effect found initial stages oxidation. The (enhanced rate) only observed higher O (above 100 L). when clusters aluminum oxide formed on surface. existence a molecular precursor state associated with these proposed, based both surface temperature beam-energy dependence rate. addition, charge trapped grains sets an electrostatic field (detected XPS WF measurements) stimulating ion diffusion further film growth.
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