p-Type conduction in phosphorus-doped ZnO thin films by MOCVD and thermal activation of the dopant

作者: Yan Miao , Zhizhen Ye , Weizhong Xu , Fugang Chen , Xincui Zhou

DOI: 10.1016/J.APSUSC.2005.10.001

关键词:

摘要: Abstract Phosphorus-doped p-type ZnO thin films have been realized by metalorganic chemical vapor deposition (MOCVD). The conduction type of is greatly dependent on the growth temperature. lowest resistivity 11.3 Ωcm and highest hole concentration 8.84 × 10 18  cm −3 at 420 °C. When temperature higher than 440 °C, cannot be achieved. All exhibited after annealing, electrical properties were improved comparing with as-grown samples. Secondary ion mass spectroscopy (SIMS) test proved that phosphorus (P) has incorporated into ZnO.

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