作者: Yan Miao , Zhizhen Ye , Weizhong Xu , Fugang Chen , Xincui Zhou
DOI: 10.1016/J.APSUSC.2005.10.001
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摘要: Abstract Phosphorus-doped p-type ZnO thin films have been realized by metalorganic chemical vapor deposition (MOCVD). The conduction type of is greatly dependent on the growth temperature. lowest resistivity 11.3 Ωcm and highest hole concentration 8.84 × 10 18 cm −3 at 420 °C. When temperature higher than 440 °C, cannot be achieved. All exhibited after annealing, electrical properties were improved comparing with as-grown samples. Secondary ion mass spectroscopy (SIMS) test proved that phosphorus (P) has incorporated into ZnO.