Piezo-optical Evidence for Λ Transitions at the 3.4-eV Optical Structure of Silicon

作者: Fred H. Pollak , Gary W. Rubloff

DOI: 10.1103/PHYSREVLETT.29.789

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参考文章(20)
J. Tauc, A. Abrahám, Optical investigation of the band structure of Ge-Si alloys Journal of Physics and Chemistry of Solids. ,vol. 20, pp. 190- 192 ,(1961) , 10.1016/0022-3697(61)90004-X
U. Gerhardt, Polarization Dependence of the Piezoreflectance in Si and Ge Physical Review Letters. ,vol. 15, pp. 401- 403 ,(1965) , 10.1103/PHYSREVLETT.15.401
U. Gerhardt, Das Reflexionsvermögen von Germanium‐ und Silizium‐Einkristallen bei elastischer Deformation Physica Status Solidi B-basic Solid State Physics. ,vol. 11, pp. 801- 818 ,(1965) , 10.1002/PSSB.19650110232
G. W. Gobeli, E. O. Kane, Dependence of the Optical Constants of Silicon on Uniaxial Stress Physical Review Letters. ,vol. 15, pp. 142- 146 ,(1965) , 10.1103/PHYSREVLETT.15.142
B. O. Seraphin, Optical Field Effect in Silicon Physical Review. ,vol. 140, pp. A1716- A1725 ,(1965) , 10.1103/PHYSREV.140.A1716
Jackson Koo, Y.R. Shen, Ricardo R.L. Zucca, Effects of uniaxial stress on the Eo1-peak of silicon Solid State Communications. ,vol. 9, pp. 2229- 2232 ,(1971) , 10.1016/0038-1098(71)90636-3
David Brust, Electronic Spectra of Crystalline Germanium and Silicon Physical Review. ,vol. 134, pp. 1337- 1353 ,(1964) , 10.1103/PHYSREV.134.A1337
Iza Goroff, Leonard Kleinman, Deformation Potentials in Silicon. III. Effects of a General Strain on Conduction and Valence Levels Physical Review. ,vol. 132, pp. 1080- 1084 ,(1963) , 10.1103/PHYSREV.132.1080
E. O. Kane, Band Structure of Silicon from an Adjusted Heine-Abarenkov Calculation Physical Review. ,vol. 146, pp. 558- 567 ,(1966) , 10.1103/PHYSREV.146.558
G. Dresselhaus, M. S. Dresselhaus, Fourier Expansion for the Electronic Energy Bands in Silicon and Germanium Physical Review. ,vol. 160, pp. 649- 679 ,(1967) , 10.1103/PHYSREV.160.649