Energy-band parameters at the GaAs– and GaN–Ga2O3(Gd2O3) interfaces
作者： T.S. Lay , M. Hong , J. Kwo , J.P. Mannaerts , W.H. Hung
DOI: 10.1016/S0038-1101(01)00175-7
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摘要: Abstract The valence-band offset (ΔEV ) has been determined to be ∼2.6 eV at the Ga2O3(Gd2O3)–GaAs interface, and ∼1.1 Ga2O3(Gd2O3)–GaN interface by high-resolution X-ray photoelectron spectroscopy with synchrotron radiation beam. Pt–Ga2O3(Gd2O3)–GaAs MOS diode exhibits a current–voltage characteristics dominated Fowler–Nordheim tunneling. From data forward reverse biases, we have extracted conduction-band (ΔEC) of ∼1.4 an electron effective mass m*∼0.29me Ga2O3(Gd2O3) layer. Consequently, energy-band gap is ∼5.4 eV, while ΔEC for ∼0.9 eV.
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