Enhanced Thermoelectric Conversion Efficiency of CVD Graphene with Reduced Grain Sizes.
作者： Gyumin Lim , Kenneth David Kihm* , Hong Goo Kim , Woorim Lee , Woomin Lee
DOI: 10.3390/NANO8070557
关键词:
摘要: The grain size of CVD (Chemical Vapor Deposition) graphene was controlled by changing the precursor gas flow rates, operation temperature, and chamber pressure. Graphene average sizes 4.1 µm, 2.2 0.5 µm synthesized in high quality full coverage. possibility to tailor thermoelectric conversion characteristics has been exhibited examining effect on three elementary thermal electrical properties σ, S, k. Electrical conductivity (σ) Seebeck coefficients (S) were measured a vacuum for supported SiO₂/Si FET (Field Effect Transistor) substrates so that charge carrier density could be changed applying gate voltage (VG). Mobility (µ) values 529, 459, 314 cm²/V·s holes 1042, 745, 490 electrons respectively, obtained from slopes σ vs. VG graphs. power factor (PF), portion figure merit (ZT), decreased about one half as decreased, while (k) quarter same decrease. Finally, resulting ZT increased more than two times when reduced µm.
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Deqi Wang, Jing Shi, Effect of charged impurities on the thermoelectric power of graphene near the Dirac point Physical Review B. ,vol. 83, pp. 113403- ,(2011) , 10.1103/PHYSREVB.83.113403
W S Bao, S Y Liu, X L Lei, Thermoelectric power in graphene. Journal of Physics: Condensed Matter. ,vol. 22, pp. 315502- 315502 ,(2010) , 10.1088/0953-8984/22/31/315502
Sung Ju Hong, Min Park, Hojin Kang, Minwoo Lee, David Soler-Delgado, Dong Seok Shin, Kyung Ho Kim, Sergey Kubatkin, Dae Hong Jeong, Yung Woo Park, Byung Hoon Kim, Verification of electron doping in single-layer graphene due to H 2 exposure with thermoelectric power Applied Physics Letters. ,vol. 106, pp. 142110- ,(2015) , 10.1063/1.4917470
Ivan Vlassiouk, Murari Regmi, Pasquale Fulvio, Sheng Dai, Panos Datskos, Gyula Eres, Sergei Smirnov, Role of hydrogen in chemical vapor deposition growth of large single-crystal graphene. ACS Nano. ,vol. 5, pp. 6069- 6076 ,(2011) , 10.1021/NN201978Y
Chaocheng Wang, Wei Chen, Cheng Han, Guang Wang, Binbing Tang, Changxin Tang, Yan Wang, Wennan Zou, Wei Chen, Xue-Ao Zhang, Shiqiao Qin, Shengli Chang, Li Wang, Growth of millimeter-size single crystal graphene on Cu foils by circumfluence chemical vapor deposition. Scientific Reports. ,vol. 4, pp. 4537- 4537 ,(2015) , 10.1038/SREP04537
L. Wang, I. Meric, P. Y. Huang, Q. Gao, Y. Gao, H. Tran, T. Taniguchi, K. Watanabe, L. M. Campos, D. A. Muller, J. Guo, P. Kim, J. Hone, K. L. Shepard, C. R. Dean, One-dimensional electrical contact to a two-dimensional material. Science. ,vol. 342, pp. 614- 617 ,(2013) , 10.1126/SCIENCE.1244358
Zengguang Cheng, Qiaoyu Zhou, Chenxuan Wang, Qiang Li, Chen Wang, Ying Fang, Toward intrinsic graphene surfaces: a systematic study on thermal annealing and wet-chemical treatment of SiO2-supported graphene devices. Nano Letters. ,vol. 11, pp. 767- 771 ,(2011) , 10.1021/NL103977D
A. V. Babichev, V. E. Gasumyants, V. Y. Butko, Resistivity and thermopower of graphene made by chemical vapor deposition technique Journal of Applied Physics. ,vol. 113, pp. 076101- ,(2013) , 10.1063/1.4792032
A. W. Tsen, L. Brown, M. P. Levendorf, F. Ghahari, P. Y. Huang, R. W. Havener, C. S. Ruiz-Vargas, D. A. Muller, P. Kim, J. Park, Tailoring Electrical Transport Across Grain Boundaries in Polycrystalline Graphene Science. ,vol. 336, pp. 1143- 1146 ,(2012) , 10.1126/SCIENCE.1218948
A. Pirkle, J. Chan, A. Venugopal, D. Hinojos, C. W. Magnuson, S. McDonnell, L. Colombo, E. M. Vogel, R. S. Ruoff, R. M. Wallace, The effect of chemical residues on the physical and electrical properties of chemical vapor deposited graphene transferred to SiO2 Applied Physics Letters. ,vol. 99, pp. 122108- ,(2011) , 10.1063/1.3643444