Gate depletion of an InSb two-dimensional electron gas
作者： Y. Hirayama , T. D. Mishima , M. B. Santos , K. Sekine , M. M. Uddin
DOI: 10.1063/1.4821106
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摘要: We investigated the gate control of a two-dimensional electron gas (2DEG) confined to InSb quantum wells with an Al2O3 dielectric formed by atomic layer deposition on surface Al0.1In0.9Sb or InSb. The wider bandgap compared resulted in linear, sharp, and non-hysteretic response 2DEG density bias structure layer. In contrast, nonlinear, slow, hysteretic (nonvolatile-memory-like) was observed completely depleted application small voltage (∼ −0.9 V).
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