作者: Shinya Sakurada , Satoshi Itoh , Michihiko Inaba , Naoyuki Nakagawa , Yasutaka Nishida
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摘要: A compound thin film solar cell of an embodiment includes: as a light-absorbing layer semiconductor which contains Cu, element (A is at least one selected from group consisting Al, In and Ga) Te, has chalcopyrite crystal structure, wherein buffer that forms interface with the Cd, Zn Ga S, Se any structure sphalerite wurtzite defect spinel lattice constant “a” or time converting to not smaller than 0.59 nm larger 0.62 nm.