Nonvolatile ferroelectric memory device and method for storing multiple bit using the same

摘要: A nonvolatile ferroelectric memory device and a method for writing reading multiple-bit data using the same, in which multiple bit is stored one cell to reduce layout area, thereby obtaining price competitiveness of chip. The includes sensing amplifier block having amplifiers comparing multiple-level signals from main bitlines them multiple-bit, being commonly used array blocks feed sensed levels back restore cell, switching transistors arranged by per sub bitline sense values unit cell.