Graphene mobility mapping

摘要: Carrier mobility and chemical doping level are essential figures of merit for graphene, large-scale characterization these properties their uniformity is a prerequisite commercialization graphene electronics electrodes. However, existing mapping techniques cannot directly assess vital parameters in non-destructive way. By deconvoluting carrier density from non-contact terahertz spectroscopic measurements conductance samples with terahertz-transparent backgates, we able to present maps the spatial variation both quantities over large areas. The demonstrated approach provides drastically more efficient alternative contacted devices, potential aggressive scaling towards wafers/minute. observed linear relation between vapour deposition indicates dominance by charged scatterers. Unexpectedly, significant variations rather than cause inhomogeneities, highlighting importance statistical approaches when assessing large-area transport properties.