Electrical study of 4H-SiC irradiated with swift heavy ions
作者： E. Kalinina , G. Onushkin , D. Davidov , A. Hallen , A. Konstantinov
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摘要: Radiation defects and electrical properties in 4H-SiC epitaxial layer bombarded with 245 MeV Kr ions were studied by deep level transient spectroscopy (DLTS) resistivity measurements. Capacitance-, current- charge-DLTS spectra show the presence mainly of Z/sub 1/ (0.66 eV) levels similar to those obtained for electrons, neutrons or light ions. The temperature dependence Schottky barriers is characterized two stages not observed previously silicon carbide conventional type irradiation.
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