Reticulated shallow etch mesa isolation
作者： Nolde Jill A , Vurgaftman Igor , Jackson Eric M , Aifer Edward H , Meyer Jerry R
DOI:
关键词:
摘要: A device including an absorber layer that can be deposited on top of a bottom contact layer. Furthermore, semi-intrinsic with energy gap wider than the conduction band and valence alignment positioned between layer, configured to allow photoexcited minority carriers collected while flow majority from are blocked. At least one mesa formed by processing removing layered materials depth at near Finally, shoulder in within materials.
lens.org 参考文章(16)
Stephanie Bostwick, Edward P. Smith, Justin Gordon Adams Wehner, Two color detector leveraging resonant cavity enhancement for performance improvement ,(2013)
Sarath D. Gunapala, David Z. Ting, Sumith V. Bandara, Cory J. Hill, nBn and pBp infrared detectors with graded barrier layer, graded absorption layer, or chirped strained layer super lattice absorption layer ,(2008)
Jerry R. Meyer, Filbert J. Bartoli, Craig A. Hoffman, Type II quantum well laser with enhanced optical matrix ,(1996)
Joseph J. Talghader, Detection beyond the standard radiation noise limit using reduced emissivity and optical cavity coupling ,(2007)
Fred A. Kish, Yoon-Kyu Song, R. Scott Kern, Michael R Krames, Arto V. Nurmikko, Carrie Carter Coman, Methods for fabricating light emitting devices having aluminum gallium indium nitride structures and mirror stacks ,(2001)
S. Maimon, G. W. Wicks, nBn detector, an infrared detector with reduced dark current and higher operating temperature Applied Physics Letters. ,vol. 89, pp. 151109- ,(2006) , 10.1063/1.2360235
E.A. Plis, M.N. Kutty, S. Myers, A. Rathi, E.H. Aifer, I. Vurgaftman, S. Krishna, Performance improvement of long-wave infrared InAs/GaSb strained-layer superlattice detectors through sulfur-based passivation Infrared Physics & Technology. ,vol. 55, pp. 216- 219 ,(2012) , 10.1016/J.INFRARED.2012.01.002
S. Bogdanov, B.-M. Nguyen, A. M. Hoang, M. Razeghi, Surface leakage current reduction in long wavelength infrared type-II InAs/GaSb superlattice photodiodes Applied Physics Letters. ,vol. 98, pp. 183501- ,(2011) , 10.1063/1.3584853
G. Chen, B.-M. Nguyen, A. M. Hoang, E. K. Huang, S. R. Darvish, M. Razeghi, Suppression of surface leakage in gate controlled type-II InAs/GaSb mid-infrared photodetectors Quantum Sensing and Nanophotonic Devices IX. ,vol. 8268, pp. 826811- ,(2012) , 10.1117/12.913741
Syn-Yem Hu, Photodiode and method of fabrication ,(2008)