作者: Dong-Kyun Ko , Christopher B. Murray
DOI: 10.1021/NN2007817
关键词:
摘要: The position of the Fermi energy level (E(F)) with respect to where transport process occurs (transport level, E(T)) is an important parameter that determines electrical properties semiconductors. However, little attention has been devoted investigating E(F) in semiconductor nanocrystal solids, both theoretically and experimentally. In this study, we perform temperature-dependent thermopower measurements on PbTe solids directly probe - E(T). We observe as size nanocrystals reduces, E(T) increases primarily due widening density state (DOS) gap. Furthermore, by modifying monodispersity nanocrystals, increase distribution states sharpens. This work promotes a deeper understanding thermal occupation well electronic processes solid systems.