Electrical effects in MeV energy ion-irradiated As2Se3 glass
作者： M Singh , KL Bhatia , N Kishore , RS Kundu , P Singh
DOI: 10.1016/S0042-207X(97)00105-X
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摘要: Abstract MeV energy ion-implantation induced modifications in simple binary glass As 2 Se 3 have been monitored by dc conductivity measurements. The study testifies that the process of at is a novel technique modifying electronic properties semiconductors. Ni ion seems to more drastic changes than Ag and Ge ions. small dose 75 ions as 5 × 10 13 ions/cm sufficient produce remarkable bombarded samples. ion-induced defects appear get diffused much deeper extent projected range.
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