Net negative fixed interface charge for Si3N4 and SiO2 grown in situ on 000-1 N-polar GaN

Choelhwyi Bae, Cristiano Krug, Gerald Lucovsky, Arpan Chakraborty, Umesh Mishra, Surface passivation of n-GaN by nitrided-thin-Ga2O3∕SiO2 and Si3N4 films Journal of Applied Physics. ,vol. 96, pp. 2674- 2680 ,(2004) , 10.1063/1.1772884

Choelhwyi Bae, Cristiano Krug, Gerald Lucovsky, Electron trapping in metal-insulator-semiconductor structures on n-GaN with SiO2 and Si3N4 dielectrics Journal of Vacuum Science and Technology. ,vol. 22, pp. 2379- 2383 ,(2004) , 10.1116/1.1806439

S. Arulkumaran, T. Egawa, H. Ishikawa, T. Jimbo, M. Umeno, Investigations of SiO2/n-GaN and Si3N4/n-GaN insulator–semiconductor interfaces with low interface state density Applied Physics Letters. ,vol. 73, pp. 809- 811 ,(1998) , 10.1063/1.122009

B. L. Swenson, U. K. Mishra, Photoassisted high-frequency capacitance-voltage characterization of the Si3N4/GaN interface Journal of Applied Physics. ,vol. 106, pp. 064902- ,(2009) , 10.1063/1.3224852

Ting-Hsiang Hung, Sriram Krishnamoorthy, Michele Esposto, Digbijoy Neelim Nath, Pil Sung Park, Siddharth Rajan, Interface charge engineering at atomic layer deposited dielectric/III-nitride interfaces Applied Physics Letters. ,vol. 102, pp. 072105- ,(2013) , 10.1063/1.4793483

Man Hoi Wong, Stacia Keller, Nidhi, Sansaptak Dasgupta, Daniel J Denninghoff, Seshadri Kolluri, David F Brown, Jing Lu, Nicholas A Fichtenbaum, Elaheh Ahmadi, Uttam Singisetti, Alessandro Chini, Siddharth Rajan, Steven P DenBaars, James S Speck, Umesh K Mishra, N-polar GaN epitaxy and high electron mobility transistors Semiconductor Science and Technology. ,vol. 28, pp. 074009- ,(2013) , 10.1088/0268-1242/28/7/074009

Y.C. Chang, M.L. Huang, Y.H. Chang, Y.J. Lee, H.C. Chiu, J. Kwo, M. Hong, Atomic-layer-deposited Al2O3 and HfO2 on GaN: A comparative study on interfaces and electrical characteristics Microelectronic Engineering. ,vol. 88, pp. 1207- 1210 ,(2011) , 10.1016/J.MEE.2011.03.098

Michele Esposto, Sriram Krishnamoorthy, Digbijoy N. Nath, Sanyam Bajaj, Ting-Hsiang Hung, Siddharth Rajan, Electrical properties of atomic layer deposited aluminum oxide on gallium nitride Applied Physics Letters. ,vol. 99, pp. 133503- ,(2011) , 10.1063/1.3645616

Ramya Yeluri, Xiang Liu, Brian L. Swenson, Jing Lu, Stacia Keller, Umesh K. Mishra, Capacitance-voltage characterization of interfaces between positive valence band offset dielectrics and wide bandgap semiconductors Journal of Applied Physics. ,vol. 114, pp. 083718- ,(2013) , 10.1063/1.4819402

Xiang Liu, Ramya Yeluri, Jing Lu, Umesh K. Mishra, Effects of H2O Pretreatment on the Capacitance–Voltage Characteristics of Atomic-Layer-Deposited Al2O3 on Ga-Face GaN Metal–Oxide–Semiconductor Capacitors Journal of Electronic Materials. ,vol. 42, pp. 33- 39 ,(2013) , 10.1007/S11664-012-2246-8