作者: Federico Faggin , Carver A. Mead
DOI:
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摘要: An integrating photosensor includes an NPN phototransistor having its collector connected to a source of positive voltage, P-channel MOS transistor gate row-select line, the emitter phototransistor, and drain column sense line. The has intrinsic base-collector capacitance. amplifier according present invention amplifying element inverting input non-inverting input. is reference voltage A balance between output capacitor also element. exponential feedback plurality photosensors disposed in array rows columns, with given row select line gates transistors associated that drains column.