Inelastic electron tunneling experiments in Bi1−xSbx alloys
作者： Jiro Nagao , Eiji Hatta , Kōichi Mukasa
DOI: 10.1063/1.370916
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摘要: Inelastic electron tunneling experiments have been performed in Bi0.94Sb0.06–Al oxide-Al junctions. A strong peak observed at 1.9 mV the second derivative tunnel spectra is closely related to estimated effective Debye temperature, besides intervalley acoustic and optical phonon structures. This structure clearly corresponds electron–intravalley coupling.
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