Semiconductor wafer cleaning using condensed-phase processing

摘要: A method and system for semiconductor wafer cleaning within a condensed-phase processing environment (54) is based on first cooling the (52) to predetermined temperature in order condense liquid film (156) surface from condensable process gas or mixture. Then, promote thermally activated reactions rapidly evaporate using high peak power, short pulse duration energy source such as pulsed microwave dissolve contaminants produce drag forces sufficiently large remove particulates (154) other of wafer. The this invention can various organic, metallic, native oxide, particulate surface.