作者: F. Ratovelomanana , N. Vodjdani , A. Enard , G. Glastre , D. Rondi
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摘要: Summary form only given. The Michelson-interferometer/semiconductor optical amplifier monolithic integration is based on the buried-stripe-loaded waveguide structure InP-GaInAsP. passive 4/spl deg/ tilted from device endface. Y-junction aperture angle of 1.5/spl deg/. Each 1200-micron long.