Origin of Enhanced Hole Injection in Inverted Organic Devices with Electron Accepting Interlayer
作者： Cephas E. Small , Sai-Wing Tsang , Junji Kido , Shu Kong So , Franky So
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摘要: Conventional organic light emitting devices have a bottom buffer interlayer placed underneath the hole transporting layer (HTL) to improve injection from indium tin oxide (ITO) electrode. In this work, substantial enhancement in efficiency is demonstrated when an electron accepting evaporated on top of HTL inverted device along with anode compared conventional anode. Current–voltage and space-charge-limited dark (DI-SCLC) measurements were used characterize N,N′-diphenyl-N,N′-bis(1-naphthyl)(1,1′biphenyl)-4,4′diamine (NPB) hole-only either molybdenum trioxide (MoO3) or 1,4,5,8,9,11-hexaazatriphenylene hexacarbonitrile (HAT-CN) as interlayer. Both normal HAT-CN showed significantly higher efficiencies similar MoO3, showing close 100%. The results doping NPB MoO3 confirmed that enhancements due enhanced charge transfer at acceptor/NPB interface.
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