Excitonic effects on the silicon plasmon resonance.
作者： Valerio Olevano , Lucia Reining
DOI: 10.1103/PHYSREVLETT.86.5962
关键词:
摘要: We present an ab initio calculation of the electron energy loss spectrum silicon including local-field, self-energy, and excitonic effects. When self-energy corrections are added to standard random phase approximation (RPA) line shape plasmon resonance worsens. The electron-hole interaction cancels this correction improves result both compared RPA one, yielding very good agreement between theory experiment provided that mixing interband transitions positive negative frequencies is included.
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