Thermal effects in low-pressure plane plasma apparatus for thin films applications
作者： G Golan , A Axelevitch , B Sigalov , B Gorenstein
关键词:
摘要: Thermal effects in a low-pressure plane plasma discharge were obtained novel implementation of triode sputtering method. This is formed relatively low vapor pressure 0.03-0.65 Pa. Electron beam temperature and ion concentration distribution, as well their dependence on argon within the plasma, experimentally studied, using Langmuir probe technique. The influence an external magnetic field concentration, electron temperature, studied too. As result these studies, various materials was done method enables deposition homogeneous thin film coatings. Analysis Cu sputtered layers with discharge.
springer.com
sci-hub.se 参考文章(8)
D. Fennell Evans, Robert J. Stokes, Fundamentals of Interfacial Engineering ,(1996)
Ram Kossowsky, Surface modification engineering CRC Press. ,(1989)
Michael A Lieberman, Alan J Lichtenberg, Principles of Plasma Discharges and Materials Processing ,(1994)
W. N. G. Hitchon, Plasma Processes for Semiconductor Fabrication ,(1999)
Richard H. Huddlestone, Stanley L. Leonard, Harold P. Furth, Plasma diagnostic techniques ,(1965)
Reinhard Glang, Leon I. Maissel, Paul P. Budenstein, Handbook of Thin Film Technology ,(1970)
T Mousel, W Eckstein, H Gnaser, Energy spectra of sputtered species under sub-keV ion bombardment: experiments and computer simulations Nuclear Instruments & Methods in Physics Research Section B-beam Interactions With Materials and Atoms. ,vol. 152, pp. 36- 48 ,(1999) , 10.1016/S0168-583X(98)00976-8
G. Golan, A. Axelevitch, R. Margolin, E. Rabinovitch, Novel approach to sputtered tantalum film resistors with controlled pre-defined resistance Microelectronics Journal. ,vol. 32, pp. 61- 67 ,(2001) , 10.1016/S0026-2692(00)00101-4