Comparison of Missing Metal Defect Formation on He In-Situ and Furnace Annealed Electroplated Copper Films

摘要: Copper electrochemical plating (ECP) has contributed to a significant rise in both systematic and random defects. A "missing metal" defect is critical problem for the 0.13 mum node normally will only be detected after chemical-mechanical polishing (CMP). Meanwhile, this also strongly dependent on post-electrochemical plating. In addition, Cu films characteristics depend critically anneal, conditions bath chemistry. This paper presents comparison of missing metal formation samples annealed using furnace versus He in-situ anneal. All copper deposition anneal processing was performed Applied Materials SlimCellTM ECP system. post-ECP carried out over 60degC 180degC temperature range, with duration times ranging from 6 s 2 hours. process, wafers began ramped at 100degC less than minute soak time. For were loaded almost an hour 200degC temperature. After annealing CMP partial polish applied as final step before analyzing scanning electron microscope (SEM). Our conclusion that levels are found comparable have no correlation reflectivity or stress. we compare capabilities performance different types processes their impact (MMD), in-line technique developed reduce total count. We present correlations these defects process parameters.