Integrated Ferrite Film Inductor for Power System-on-Chip (PowerSoC) Smart Phone Applications
作者： Jaejin Lee , Yang-Ki Hong , Seok Bae , Jeevan Jalli , Jihoon Park
DOI: 10.1109/TMAG.2010.2092420
关键词:
摘要: An array of ferrite and air-core inductors was fabricated on silicon wafer to characterize inductor performance. The 1 μm 2.5 thick films for the fabrication were prepared by dc magnetron sputtering. inductance increased with thickness film from 45.5 nH 50 ferrite. maximum Q-factor obtained be 59 at 2.87 MHz inductor, which is higher than 49.3 2.26 23.2 1.56 inductor. Superimposed current estimated A 2.15 A, respectively, corresponding a 5% drop in L 10 MHz. In addition, power efficiency buck dc-dc converter based studied calculated 91.7% 90.1% load 0.647 A.
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