Growth and characterization of germanium epitaxial film on silicon (001) with germane precursor in metal organic chemical vapour deposition (MOCVD) chamber
作者： Kwang Hong Lee , Adam Jandl , Yew Heng Tan , Eugene A. Fitzgerald , Chuan Seng Tan
DOI: 10.1063/1.4822424
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摘要: … chemical vapour deposition (MOCVD) system is studied. The growth sequence consists of several steps at low temperature (LT) at 400 C, intermediate temperature ramp (LT-HT) of ∼…
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